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| VISHAY RG1A to RG1M Vishay Semiconductors Fast Sinterglass Diode \ Features * High temperature metallurgically bonded construction * Hermetically sealed package * Cavity-free glass passivated junction * 1.0 ampere operation at Tamb = 55 C with no thermal runaway * Fast switching for high efficiency 17031 Mechanical Data Case: Sintered glass case, JEDEC DO-204AP Terminals: Solder plated axial leads, solderable per MILSTD- 750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 560 mg Parts Table Part RG1A RG1B RG1D RG1G RG1J RG1K RG1M VRRM = 50 V VRRM = 100 V VRRM = 200 V VRRM = 400 V VRRM = 600 V VRRM = 800 V VRRM = 1000 V Type differentiation DO-204AP ( G1) DO-204AP ( G1) DO-204AP ( G1) DO-204AP ( G1) DO-204AP ( G1) DO-204AP ( G1) DO-204AP ( G1) Package Document Number 86074 Rev. 2, 28-Jan-03 www.vishay.com 1 RG1A to RG1M Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Maximum full load reverse current 0.375 " (9.5 mm) lead length at Tamb = 55 C 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) full cycle average 0.375 " (9.5 mm) lead length at Tamb = 25 C full cycle average 0.375 " (9.5 mm) lead length at Tamb = 100 C Operating junction and storage temperature range Part RG1A RG1B RG1D RG1G RG1J RG1K RG1M Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IF(AV) IFSM IR(AV) IR(AV) TJ, TSTG VISHAY Value 50 100 200 400 600 800 1000 1.0 30 1.0 100 - 55 to + 175 Unit V V V V V V V A A A A C Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Typical thermal resistance 1) 1) Symbol RJA Value 55 Unit K/W Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Maximum instantaneous forward voltage Reverse current Maximum reverse recovery time IF = 1 A VR = VRRM IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical junction capacitance VR = 4.0 V, f = 1 MHz RG1A RG1B RG1D RG1G RG1J RG1K RG1M Test condition Part Symbol VF IR trr trr trr trr trr trr trr CJ 15 Typ. Max 1.3 2.0 150 150 150 150 200 250 500 Unit V A ns ns ns ns ns ns ns pF www.vishay.com 2 Document Number 86074 Rev. 2, 28-Jan-03 VISHAY Typical Characteristics (Tamb = 25 C unless otherwise specified) Average Forward Rectified Current (A) 1.0 Resistive or Inductive Load 0.8 Ipk / IAV = 0.6 Capacitance Load Ipk / IAV = 5.0 10 20 20 RG1A to RG1M Vishay Semiconductors Instantaneous Reverse Current (A) 10 TJ = 125C 1 0.4 TJ = 75C 0.1 0.2 0.375" (9.5mm) Lead Length 0 0 25 50 75 100 125 150 175 TJ = 25C 0.01 0 20 40 60 80 100 grg1a_01 Ambient Temperature (C) grg1a_04 Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Characteristics 30 30 TA = 25C 8.3ms Single Half Sine-Wave (JEDEC Method) TJ = 25C f = 1.0MHZ Vsig, 50mVp-p max. 10 Peak Forward Surge Current (A) 20 10 Junction Capacitance (pF) 0 1 grg1a_02 10 100 grg1a_05 1 1 10 100 Number of Cycles at 60 HZ Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Junction Capacitance 20 Instantaneous Forward Current (A) 10 TJ = 25C 1 Pulse Width = 300s 1% Duty Cycle 0.1 0.01 0.4 grg1a_03 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Document Number 86074 Rev. 2, 28-Jan-03 www.vishay.com 3 RG1A to RG1M Vishay Semiconductors Package Dimensions in Inches (mm) VISHAY 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4) MIN. 17030 www.vishay.com 4 Document Number 86074 Rev. 2, 28-Jan-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to RG1A to RG1M Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86074 Rev. 2, 28-Jan-03 www.vishay.com 5 |
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